Sains Malaysiana 49(12)(2020): 2997-3005

http://dx.doi.org/10.17576/jsm-2020-4912-11

Enhanced Performance of Quantum Dots Sensitized Solar Cell Utilizing Copper Indium Sulfide and Reduced-Graphene Oxide with the Presence of Silver Sulfide

(Peningkatan Prestasi Sel Suria Dipekakan Titik Kuantum menggunakan Tembaga Indium Sulfida dan Grafin Oksida Terturun dengan Kehadiran Perak Sulfida)

NURUL SYAFIQAH MOHAMED MUSTAKIM^1,2, MUHAZRI ABD MUTALIB², SUHAILA SEPEAI², NORASIKIN AHMAD LUDIN², MOHD ASRI MAT TERIDI² & MOHD ADIB IBRAHIM²*

¹Spectrum International College of Technology, 2F-26A, The Main Place Mall, Jalan USJ21/10, USJ 21, 47360 Subang Jaya, Selangor Darul Ehsan, Malaysia

²Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia

Diserahkan: 12 Ogos 2020/Diterima: 27 Ogos 2020

ABSTRACT

In this study, rGO/CuInS₂ has been successfully prepared onto TiO₂ thin film using solvothermal method followed by Ag₂S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology, structural, and optical properties of TiO₂/rGO/CuInS₂ thin film were investigated by using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscope (AFM), X-ray diffraction (XRD) and ultra-violet-visible near infrared spectrophotometer (UV-Vis). For electrical properties, electrochemical impedance spectra (EIS) and current-voltage (I-V) test investigated the interfacial charge-transfer resistances and the conversion efficiency of the samples. Results showed that the average particles size of the samples ranged from ±46.52 to ±53.97 nm in diameter. UV-VIS analysis indicated that TiO₂/rGO/CuInS₂ thin film showed better light absorption capability with the presence of Ag₂S deposition layers. The rGO/CuInS₂ quantum dot sensitized with Ag₂S layers exhibit a photovoltaic power conversion efficiency of 0.33%, which has great improvement of short circuit current (I_SC) comparing with that of rGO/CuInS₂ quantum dot sensitized without Ag₂S deposition layers.

Keywords: Ag₂S; CuInS₂; quantum dots; rGO; SILAR; solar cells; solvothermal

ABSTRAK

Dalam kajian ini, rGO/CuInS₂ telah berjaya disediakan ke atas filem nipis TiO₂ dengan menggunakan kaedah solvoterma diikuti dengan lapisan pemendapan Ag₂S melalui teknik penjerapan dan tindak balas lapisan ion berturut-turut (SILAR). Sifat morfologi, struktur dan optik bagi filem nipis TiO₂/rGO/CuInS₂ dikaji dengan menggunakan mikroskopi elektron imbasan bidang (FESEM), spektroskopi sinar-X penyebaran tenaga (EDX), mikroskop kekuatan atom (AFM), difraksi sinar-X (XRD) dan spektrofotometer dekat inframerah ultraungu boleh nampak (UV-VIS). Untuk sifat elektrik, ujian elektrokimia impedansi spektra (EIS) dan arus-voltan (I-V) mengkaji rintangan pemindahan cas antara muka dan kecekapan penukaran sampel. Hasil kajian menunjukkan bahawa ukuran purata bagi sampel hablur adalah berkisar antara ± 46.52 hingga ± 53.97 nm. Analisis UV-VIS menunjukkan bahawa filem nipis TiO₂/rGO/CuInS₂ menunjukkan keupayaan penyerapan cahaya yang lebih baik dengan adanya lapisan pemendapan Ag₂S. Titik kuantum terpeka rGO/CuInS₂ dengan lapisan Ag₂S menunjukkan kecekapan penukaran kuasa fotovoltan sebanyak 0.33%, yang mempunyai peningkatan arus litar pintas (I_SC) yang besar berbanding dengan titik kuantum terpeka rGO/CuInS₂ tanpa lapisan pemendapan Ag₂S.

Kata kunci: Ag₂S; CuInS₂; rGO; sel suria; SILAR; solvoterma; titik kuantum

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*Pengarang untuk surat-menyurat; email: mdadib@ukm.edu.my