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Sains Malaysiana 48(6)(2019): 1251–1257
http://dx.doi.org/10.17576/jsm-2019-4806-12
G-Centre Formation and
Behaviour in a Silicon on Insulator Platform by Carbon Ion Implantation
and Proton Irradiation (Pembentukan
Pusat-G dan
Kelakuan dalam Silikon Pentas Penebat Implantasi Ion Karbon dan Sinaran Proton)
D.D. BERHANUDDIN1,2*, N.E.A. RAZAK1, M.A. LOURENÇO2,3, B.Y. MAJLIS1 & K.P. HOMEWOOD2,3,4
1Institute
of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan, Malaysia
2Advanced
Technology Institute, Faculty of Engineering and Physical Sciences, University
of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
3Materials
Research Institute and School of Physics and Astronomy, Queen Mary University
of London, Mile End Road, E1 4NS London, United Kingdom
4School
of Materials Science & Engineering, Hubei University, Wuhan 430062, P.R.
China
Diserahkan: 31 Disember 2018/Diterima: 26 Februari 2019
ABSTRACT
The interest in the G-centre is driven by reports that it can lase in silicon. To
further this, the transfer of this technology from bulk silicon to a
silicon-on-insulator (SOI) platform is an essential
requirement to progress to lasing and optical amplification on silicon. We
report on the efficient generation of the lasing G-centre in SOI substrates by proton irradiation of carbon ion
implants. Following carbon implantation samples were annealed and then proton
irradiated to form the G-centre and characterized by
photoluminescence measurements. The temperature dependence of the emission and
the behaviour of the G-centre with post proton annealing were investigated and results are compared with
identical implants in control samples of bulk silicon. Overall, we find that
the optically active G-centre can be up to 300%
brighter and has better survivability over a wider process window in SOI than
in bulk silicon.
Keywords: G-center; ion
implantation; photoluminescence; point-defect; SOI
ABSTRAK
Pusat kecacatan titik yang menyinar, Pusat G mula mendapat perhatian apabila terdapat laporan mengatakan ia dapat menghasilkan laser di dalam silikon. Tambahan lagi, pemindahan teknologi daripada silikon pukal ke silikon-atas-penebat (SOI) adalah keperluan penting untuk kemajuan laser dan penguat optik daripada silikon. Kami melaporkan tentang janaan cahaya yang cekap, Pusat G di dalam substrat SOI dengan menggunakan teknik implantasi karbon ion dan penyinaran proton. Selepas penempelan karbon, sampel telah disepuh-lindap dan disinari dengan proton bertenaga tinggi untuk menghasilkan Pusat G yang kemudiannya akan dicirikan menggunakan kaedah pengukuran fotoluminesens. Sampel yang mempunyai keamatan cahaya paling tinggi daripada SOI dan silikon pukal dipilih untuk disepuh-lindap sekali lagi untuk mengkaji kesan pembentukannya, dan pemusnahan pusat kecacatan titik. Secara keseluruhan,
kami merumuskan pusat kecacatan titik yang menyinar Pusat G dapat menyinar pada lebih 300% dan mempunyai kemandirian yang lebih baik di dalam SOI berbanding silikon pukal.
Kata kunci: Fotoluminesen; kecacatan titik; penempelan ion: pusat G; SOI
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*Pengarang untuk surat-menyurat; email:
dduryha@ukm.edu.my
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