Sains Malaysiana 48(6)(2019): 1195–1199
http://dx.doi.org/10.17576/jsm-2019-4806-06
Effects of
Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer
at Germanium (Ge) /Aluminium Oxide (Al2O3)
(Kesan Suhu
Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida
Germanium (Ge)/Aluminium (Al2O3))
SITI KUDNIE SAHARI1*, NIK AMNI FATHI NIK ZAINI FATHI1, AZRUL AZLAN HAMZAH2, NORSUZAILINA MOHAMED SUTAN1, ZAIDI EMBONG3, SUHANA MOHAMED SULTAN4, MUHAMMAD KASHIF1, MARINI SAWAWI1, LILIK HASANAH5, ROHANA SAPAWI1,
KURYATI KIPLI1, ABDUL RAHMAN KRAM1 & NAZREEN JUNAIDI1
1Faculty of Engineering, Universiti
Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia
2Institute of MicroEngineering and
Nanotechnology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi,
Selangor Darul Ehsan, Malaysia
3Faculty of Science, Technology and Human
Development, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat,
Johor Darul Takzim, Malaysia
4Department of Electronic and Computer
Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor Bahru, Johor
Darul Takzim, Malaysia
5Universitas Pendidikan Indonesia, Jl. Dr.
Setiabudhi No 229, Bandung, Indonesia
Diserahkan: 14 Ogos 2018/Diterima:
26 November 2018
ABSTRACT
The understanding of
chemical bonding structure of high k dielectrics/Germanium (Ge) interface is
upmost importance in order to form a good quality dielectric/Ge interface in
fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs).
In addition, there is still no detail explanation on the interfacial growth of
dielectrics/Ge under the influenced of different temperature of post deposition
anneal. In current work, the effects of post deposition anneal (PDA)
temperature between 400°C and 600°C on the
chemical composition of interfacial layer between Ge and Al2O3 were
examined by X-ray photoelectron spectroscopy (XPS).
Investigation on thermal stability and structural characteristics for gate
structure of Al2O3 dielectric
grown on Ge by RF sputtering was done by analyzing X-ray photoelectron
spectroscopy (XPS) spectra. It is observed that the oxygen deficient
region in interfacial layer (IL) is enhanced rather than
fully oxidized Al2O3 with
increased PDA temperatures. These undesired phenomena caused
shrinkage of IL at Ge/Al2O3 interface
at higher temperature of 600°C.
Keywords: Al2O3;
germanium; interfacial layer; post deposition anneal
ABSTRAK
Pemahaman tentang
struktur ikatan kimia yang tinggi dielektrik/antara muka Germania (Ge) adalah
sangat penting untuk membentuk antara muka dielektrik/Ge berkualiti baik dalam
fabrikasi Ge kesan medan transistor logam oksida semikonduktor (MOSFETs).
Di samping itu, masih belum ada penjelasan terperinci mengenai pertumbuhan
antara dielektrik/Ge di bawah pengaruh suhu yang berlainan bagi pemanasan pasca
sepuh lindap. Penyelidikan kesan suhu pemendapan pasca sepuh lindap (PDA)
antara 400°C dan 600°C pada komposisi kimia lapisan antara antara Ge dan Al2O3 diperiksa
oleh spektroskopi fotoelektron x-ray (XPS). Dalam makalah ini, kami
mengkaji kestabilan terma dan pencirian struktur untuk struktur gerbang Al2O3 dielektrik
yang ditanam di Ge oleh percikan RF oleh spektroskopi
fotoelektron x-ray (XPS). Difahamkan bahawa rantau
kekurangan oksigen dalam lapisan antara muka (IL)
ditingkatkan daripada Al2O3 sepenuhnya
teroksida dengan suhu PDA yang meningkat. Fenomena yang
tidak diingini ini menyebabkan pengecutan IL pada
antara muka Ge/Al2O3 pada
suhu lebih tinggi 600°C.
Kata kunci: Al2O3;
Ge; lapisan antara muka; pos pemendapan rawatan haba
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*Pengarang untuk surat-menyurat; email: sskudnie@unimas.my
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