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Sains Malaysiana 46(7)(2017): 1141–1145
http://dx.doi.org/10.17576/jsm-2017-4607-17
Pencirian Transistor Karbon Tiub Nano Berdinding Tunggal yang Dihasilkan melalui Kaedah Pertumbuhan Langsung
(Characterization of Single-Walled
Carbon Nanotube Transistors by Direct Growth Method)
MOHD AMBRI MOHAMED*, FARAH DZILHANI ZULKEFLI
& BURHANUDDIN YEOP MAJLIS
Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia,
43600 UKM Bangi, Selangor Darul
Ehsan, Malaysia
Diserahkan: 1 Januari 2017/Diterima: 6 Februari 2017
ABSTRAK
Transistor
berasaskan karbon
tiub nano (CNTFET)
telah dihasilkan
melalui kaedah pertumbuhan langsung menggunakan alkohol pemangkin pemendapan wap kimia. Sifat struktur dan ciri
elektrik peranti
telah dikaji. FET
ini menunjukkan operasi ambikutub
dan ia
selaras dengan jenis-Schottky FET. Ia telah didapati bahawa ketinggian halangan Schottky yang wujud antara sentuhan elektrod dan CNT,
boleh termodulat oleh aplikasi berkesan
daripada voltan
pincang (VDS) dan
voltan get (VGS). Aplikasi
voltan pincang
sahaja tidak mudah
untuk merendahkan
ketinggian halangan Schottky dan ketebalan
halangan Shottky,
tetapi ia
berkait rapat
dengan aplikasi voltan get. Bagi konfigurasi peranti dalam kajian ini,
keberkesanan medan
boleh dikaitkan dengan VGS:VDS
= 10:-1. Peningkatan arus didapati
disebabkan oleh pengurangan tenaga pengaktifan. Kaitan yang
jelas antara kesan
voltan pincang,
voltan get dan tenaga pengaktifan telah diperhati dalam kajian ini.
Kata kunci: Alkohol pemangkin pemendapan wap kimia (ACCVD); kaedah pertumbuhan langsung; karbon tiub nano berdinding tunggal; keberkesanan-medan voltan pincang dan get; tenaga pengaktifan
ABSTRACT
Carbon nanotube field-effect
transistor (CNTFET) was fabricated by means of direct growth method
using alcohol catalytic chemical vapor deposition. The structural
properties and characteristics of devices have been investigated.
The FET shows
ambipolar
operation which is consistent
with Schottky-type FET. It was found that carrier
injection barrier heights that exist at the contacts of metal
and CNT,
can be modulated by application of effective bias and gate voltages.
The application of bias voltage does not simply reduce the carrier
injection barrier, but is correlated with the application of
gate voltage. For the device configuration in this study, the
field-effectiveness can be related as VGS:VDS = 10:-1. The enhancement of current
can be attributed to the reduction of activation energy. The
clear correlation between the effects of bias voltage, gate
voltage and activation energy has been observed in this study.
Keywords: Activation energy;
alcohol catalytic chemical vapor deposition (ACCVD);
direct growth; effectiveness of bias and gate voltages; single-walled carbon
nanotubes
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*Pengarang untuk surat-menyurat; email: ambri@ukm.edu.my
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