Sains Malaysiana 43(6)(2014): 861–866

A Review on Modeling the Channel Potential in Multi-Gate MOSFETs

(Ulasan Terhadap Model Keupayaan Saluran dalam Multi-Gate MOSFET)

HOSSEIN MOHAMMADI¹*, HUDA ABDULLAH¹& CHANG FU DEE²

¹Department of Electrical, Electronic and Systems Engineering, Faculty of Engineering

Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia

²Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia

43600 UKM Bangi, Selangor, Malaysia

Diserahkan: 25 April 2013/Diterima: 23 Januari 2014

ABSTRACT

This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.

Keywords: Multi-gate SOI MOSFETs; natural channel length; potential distribution; short channel effects

ABSTRAK

Kertas ini bertujuan untuk memberikan kajian secara terperinci dan memberi penerangan yang lengkap terhadap bidang teknologi, fizik dan model pelbagai berbilang-gerbang MOSFET. Kertas ini merangkumi sinopsis gambaran matematik terhadap pengagihan potensi di sepanjang saluran pelbagai Multi Gate -MOSFET yang boleh menghasilkan sifat peranti untuk analisis komputer berkelajuan tinggi. Hubungan ini menyediakan teknologi proses dan reka bentuk litar. Ulasan ini menunjukkan bahawa teknologi berbilang-gerbang MOSFET amat diperlukan dalam domain berskala nano. Terdapat banyak juga permintaan untuk model analitikal dan ulasan ini boleh menerangkan secara jelas berkenaan fizik dan operasi peranti tersebut.

Kata kunci: Berbilang-gerbang SOI MOSFETs; kesan alur; keupayaan agihan; panjang alur asli

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*Pengarang untuk surat-menyurat; email: h.mohammadi@eng.ukm.edu.my