Sains Malaysiana 43(6)(2014):
819–825
An Analysis of
the Electron Trajectory in the Vicinity of GaAs Quantum Dot
(Analisis Lintasan
Pergerakan Elektron di Sekitar Titik Kuantum GaAs)
HANAFI ITHNIN12*, M.
KHALID
KASMIN1, A.
RADZI
MAT
ISA1, A.
SHAARI1& R. AHMED1
1Department
of Physics, Faculty of Science, Universiti Teknologi Malaysia, UTM
Skudai, 81310 Johor, Malaysia
2Plan
Assesment Technology (PAT), Industrial Technology Division, Malaysian
Nuclear Agency, Bangi, 43000 Kajang, Selangor, Malaysia
Diserahkan: 29 Mac 2013/Diterima: 21 Disember 2013
ABSTRACT
Quantum dots being an interesting
class of nanostructures are considered potential prototype systems for novel
nano-devices such as single electron transistor (SET). Here in this research,
we present an analysis of the electron trajectory in the vicinity of gallium
arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is
employed to optimize structure of quantum dot and determining the electrostatic
potential around the dot. Under the influence of obtained electrostatic
potential, trajectory of the moving electron towards the dot is investigated.
The results showed that GaAs quantum dot have negative and positive potential
surfaces that influence the electron interaction with the dot. These results
motivate the development of SET electrode channel where the electron moves
towards the dot on the surface with positive potential rather than negative
potential surface.
Keywords: Density functional theory;
electron trajectory; GaAs; quantum dot
ABSTRAK
Titik kuantum adalah kelas struktur-nano
yang menarik dan dianggap berpotensi sebagai sistem prototip untuk
peranti-nano seperti transistor elektron tunggal (SET). Dalam kajian
ini kami melaporkan analisis lintasan elektron di sekitar titik
kuantum galium arsenida (GaAs). Dalam kajian ini, kaedah DFT digunakan
untuk mengoptimumkan struktur titik kuantum dan mengira keupayaan
elektrostatik di sekeliling titik kuantum. Di bawah aruhan keupayaan
elektrostatik yang didapati, lintasan pergerakan satu elektron menuju
ke titik kuantum dikaji. Hasil kajian. menunjukkan bahawa titik
kuantum GaAs mempunyai permukaan keupayaan positif dan negatif yang
mengaruh interaksi antara elektron dan titik kuantum. Hasil kajian
ini memotivasikan pembangunan saluran elektrod SET dengan elektron
bergerak menuju ke arah titik kuantum pada permukaan keupayaan positif
berbanding permukaan berkeupayaan negatif.
Kata kunci: GaAs; lintasan elektron;
teori fungsi ketumpatan; titik kuantum
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*Pengarang untuk surat-menyurat;
email: hanafizik@gmail.com
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