Sains Malaysiana 43(2)(2014): 247–252

 

Design and Optimization of Coupled Microring Resonators (MRRs) in Silicon-on-Insulator

(Reka Bentuk dan Pengoptimuman Penyalun Mikrogegelang Terganding di dalam Silikon-di atas-Penebat)

BUDI MULYANTI1, P. SUSTHITHA MENON2*, SAHBUDIN SHAARI2, T. HARIYADI1, L. HASANAH3, HAZURA HAROON2, ABANG ANNUAR EHSAN2, D. MAHMUDIN4, G. WIRANTO4& B.Y. MAJLIS2

 

1Department of Electrical Engineering Education

Indonesia University of Education (UPI), Jalan Dr. Setiabudhi 207, Bandung 40154

Indonesia

 

2Abang Annuar Ehsan & B.Y. Majlis

Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM) 43600 UKM Bangi, Selangor, Malaysia

 

3Department of Physics Education

Faculty of Mathematics and Natural Sciences Education, Indonesia University of Education (UPI)

Jalan Dr. Setiabudhi 207, Bandung 40154, Indonesia

 

4Research Centre for Electronics and Telecommunication, Indonesian Institute of Sciences (LIPI)

Jl. Sangkuriang Bandung 40135, Indonesia

 

Diserahkan: 5 Februari 2013/Diterima: 30 Julai 2013

 

 

ABSTRACT

The design of microring resonators (MRRs) for serial configuration, integrated in the lateral scheme was presented and simulated using 3D electromagnetic simulator based on finite integration technique. The device model is embedded on the high index contrast (HIC) structure of silicon-on-insulator with monomodal cavity for TE-mode polarizations. From the proposed model, we varied the MRRs order, waveguides separation distance and ring radius, in order to evaluate the influence of those parameters on the device performance in terms of loss, free spectral range (FSR) and quality factor (Q-factor). Upon varying the gap distances, it was found that the highest Q-factor value of the proposed design was 1275 obtained at gap separation of 150 nm for ring radius of 6 μm, while the largest FSR was 24 nm. The trade-offs between device compactness, optical bandwidth and Q- factor are also presented.

 

Keywords: 3D electromagnetic simulator; microring resonators; silicon-on-insulator

 

ABSTRAK

Kami melaporkan reka bentuk penyalun mikrogegelang (MRR) bagi konfigurasi sesiri dan diintegrasikan secara susunan sisi menggunakan simulasi elektromagnetik 3D berpandukan teknik integrasi terhingga. Model peranti terbenam di atas struktur silikon-di atas-penebat dengan perbezaan indeks yang tinggi (HIC) dan polarisasi mod TE tunggal. Daripada model yang dicadangkan, kami mevariasikan tertib MRR, jarak pemisahan pandu gelombang dan jejari gegelang bagi mengkaji kesan parameter tersebut terhadap prestasi peranti khususnya kehilangan, julat spektrum bebas (FSR) dan faktor kualiti (faktor-Q). Dengan mengubah jarak jurang, didapati nilai faktor-Q tertinggi adalah 1275 pada jarak pemisahan 150 nm dan jejari 6 μm, manakala FSR tertinggi adalah 24 nm. Timbal–balik antara saiz peranti, lebar jalur optik dan faktor-Q juga dinyatakan.

 

Kata kunci: Penyalun mikrogegelang; silikon-di atas-penebat; simulasi elektromagnetik 3D

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*Pengarang untuk surat-menyurat; email: susi@eng.ukm.my

 

 

 

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