Sains Malaysiana 43(2)(2014): 247–252
Design
and Optimization of Coupled Microring Resonators (MRRs)
in Silicon-on-Insulator
(Reka Bentuk dan Pengoptimuman Penyalun Mikrogegelang Terganding
di dalam Silikon-di atas-Penebat)
BUDI MULYANTI1, P. SUSTHITHA
MENON2*, SAHBUDIN
SHAARI2, T.
HARIYADI1, L.
HASANAH3, HAZURA
HAROON2, ABANG
ANNUAR
EHSAN2, D.
MAHMUDIN4, G.
WIRANTO4& B.Y. MAJLIS2
1Department
of Electrical Engineering Education
Indonesia
University of Education (UPI), Jalan Dr. Setiabudhi 207, Bandung
40154
Indonesia
2Abang
Annuar Ehsan & B.Y. Majlis
Institute
of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan
Malaysia (UKM) 43600 UKM Bangi, Selangor, Malaysia
3Department
of Physics Education
Faculty
of Mathematics and Natural Sciences Education, Indonesia University
of Education (UPI)
Jalan
Dr. Setiabudhi 207, Bandung 40154, Indonesia
4Research
Centre for Electronics and Telecommunication, Indonesian Institute
of Sciences (LIPI)
Jl.
Sangkuriang Bandung 40135, Indonesia
Diserahkan:
5 Februari 2013/Diterima: 30 Julai 2013
ABSTRACT
The design of microring resonators (MRRs)
for serial configuration, integrated in the lateral scheme was presented and
simulated using 3D electromagnetic simulator based on finite integration
technique. The device model is embedded on the high index contrast (HIC)
structure of silicon-on-insulator with monomodal cavity for TE-mode
polarizations. From the proposed model, we varied the MRRs
order, waveguides separation distance and ring radius, in order to evaluate the
influence of those parameters on the device performance in terms of loss, free
spectral range (FSR) and quality factor (Q-factor).
Upon varying the gap distances, it was found that the highest Q-factor value of
the proposed design was 1275 obtained at gap separation of 150 nm for ring
radius of 6 μm, while the largest FSR was 24 nm. The trade-offs
between device compactness, optical bandwidth and Q- factor are also presented.
Keywords: 3D electromagnetic simulator; microring resonators;
silicon-on-insulator
ABSTRAK
Kami melaporkan reka bentuk penyalun mikrogegelang (MRR)
bagi konfigurasi sesiri dan diintegrasikan secara susunan sisi menggunakan
simulasi elektromagnetik 3D berpandukan teknik integrasi terhingga. Model peranti
terbenam di atas struktur silikon-di atas-penebat dengan perbezaan indeks yang
tinggi (HIC) dan polarisasi mod TE tunggal.
Daripada model yang dicadangkan, kami mevariasikan tertib MRR,
jarak pemisahan pandu gelombang dan jejari gegelang bagi mengkaji kesan
parameter tersebut terhadap prestasi peranti khususnya kehilangan, julat
spektrum bebas (FSR) dan faktor kualiti (faktor-Q).
Dengan mengubah jarak jurang, didapati nilai faktor-Q tertinggi adalah 1275
pada jarak pemisahan 150 nm dan jejari 6 μm, manakala FSR tertinggi
adalah 24 nm. Timbal–balik antara saiz peranti, lebar jalur optik dan
faktor-Q juga dinyatakan.
Kata kunci: Penyalun mikrogegelang; silikon-di
atas-penebat; simulasi elektromagnetik 3D
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*Pengarang
untuk surat-menyurat; email: susi@eng.ukm.my
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