Sains Malaysiana 46(7)(2017): 1033–1038

http://dx.doi.org/10.17576/jsm-2017-4607-04

 

Growth Conditions of Graphene Grown in Chemical Vapour Deposition (CVD)

(Keadaan Tumbesaran Grafin yang Dihasilkan dengan Pemendapan Wap Kimia)

 

MOHAMAD SHUKRI SIRAT¹, EDHUAN ISMAIL¹, HADI PURWANTO¹, MOHD ASYADI

AZAM MOHD ABID² & MOHD HANAFI ANI¹*

¹Department of Manufacturing and Materials Engineering, International Islamic University Malaysia (IIUM), Jalan Gombak, 53100 Kuala Lumpur, Federal Territory, Malaysia

 

²Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya

76100 Durian Tunggal, Melaka Bandaraya Bersejarah, Malaysia

 

Received: 31 October 2016/Accepted: 3 January 2017

 

ABSTRACT

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH₄ concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.

 

Keywords: Chemical vapour deposition (CVD); graphene; optimization

 

ABSTRAK

Penghasilan grafin yang berkualiti tinggi menjadi tumpuan utama dalam kaedah pemendapan wap kimia (CVD) pada masa kini kerana ia boleh diskalakan untuk pengeluaran peranti elektronik berasaskan grafin secara besar-besaran. Kualiti grafin diukur daripada jumlah kecacatan, jumlah lapisan dan perubahan sifat lain seperti pergerakan elektron, ketelusan dan daya konduksi jika dibandingkan dengan grafin asli. Di sini, kami telah menjalankan kajian perubahan keadaan tindak balas seperti kepekatan metana, CH4 dan masa pemendapan terhadap kualiti grafin yang dihasilkan. Kami telah mengenal pasti dengan menurunkan kedua-dua kepekatan CH₄ sehingga 20% dan masa pemendapan sehingga 5 min akan menghasilkan kualiti grafin yang lebih baik dengan nisbah I2D/IG sebanyak 0.82 lebih tinggi berbanding keadaan tindak balas lain. Menerusi analisis ini, kami menyimpulkan bahawa terdapat dua parameter penting yang perlu dikawal untuk menghasilkan grafin yang berkualiti tinggi.

 

Kata kunci: Grafin; pemendapan wap kimia (CVD); pengoptimuman

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*Corresponding author; email: mhanafi@iium.edu.my